Low-threshold ZnO random lasing in a homojunction diode with embedded double heterostructure
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چکیده
An electrically pumped random laser diode was fabricated with a MgZnO/ZnO/MgZnO double heterostructure embedded in a ZnO pn junction. Gain can be achieved at very low-threshold current owing to exciton processes. Light closed loops are formed by random multiple scattering on vertical column boundaries in the thin film. The tilted and rough mesa edge planes serve as refraction mirrors, giving rise to surface emission.
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تاریخ انتشار 2012